JOPSS - Search Results

Journal Articles

Evaluation of radiation tolerance of perovskite solar cell for use in space

Miyazawa, Yu*; Ikegami, Masashi*; Miyasaka, Tsutomu*; Oshima, Takeshi; Imaizumi, Mitsuru*; Hirose, Kazuyuki*

Proceedings of 42nd IEEE Photovoltaic Specialists Conference (PVSC-42) (CD-ROM), p.1178 - 1181, 2015/06

https://doi.org/10.1109/PVSC.2015.7355859

Journal Articles

Impact of nanostructures and radiation environment on defect levels in III-V solar cells

Hubbard, S.*; Sato, Shinichiro; Schmieder, K.*; Strong, W.*; Forbes, D.*; Bailey, C. G.*; Hoheisel, R.*; Walters, R. J.*

Proceedings of 40th IEEE Photovoltaic Specialists Conference (PVSC-40) (CD-ROM), p.1045 - 1050, 2014/06

https://doi.org/10.1109/PVSC.2014.6925093

Baseline and quantum dot (QD) GaAs pn-junction diodes were characterized by deep level transient spectroscopy before and after both 1MeV electron irradiation and 140 keV proton irradiation. Prior to irradiation, the addition of quantum dots appeared to have introduced a higher density of defects at EC-0.75 eV. After 1 MeV electron irradiation the well-known electron defects E3, E4 and E5 were observed in the baseline sample. In the quantum dot sample after 1 MeV electron irradiation, defects near E3, E4 and EC-0.75 eV were also observed. Compared to the irradiated baseline, the QD sample shows a higher density of more complex E4 defect and a lower density of the simple E3 defect, while the EC-0.75 eV defect seemed to be unaffected by electron irradiation. As well, after proton irradiation, well known proton defects PR1, PR2, PR4' are observed. The QD sample shows a lower density PR4' defects and a similar density of PR2 defects, when compared to the proton irradiated baseline sample.

Journal Articles

Effect of irradiation on gallium arsenide solar cells with multi quantum well structures

Maximenko, S.*; Lumb, M.*; Hoheisel, R.*; Gonzlez, M.*; Scheiman, D.*; Messenger, S.*; Tibbits, T. N. D.*; Imaizumi, Mitsuru*; Oshima, Takeshi; Sato, Shinichiro; et al.

Proceedings of 40th IEEE Photovoltaic Specialists Conference (PVSC-40) (CD-ROM), p.2144 - 2148, 2014/06

https://doi.org/10.1109/PVSC.2014.6925349

In this paper, a complex analysis of the radiation response of GaAs solar cells with multi quantum wells (MQW) incorporated in the i-region of the device is presented. Electronic transport properties of the MQW i-region were assessed experimentally by the electron beam induced current (EBIC) technique. A 2-D EBIC diffusion model was applied to simulate EBIC line scans across device structure for different radiation doses. The results are interpreted using numerical modeling of the electrical field distribution at different radiation levels. Type conversion from n- to p-type was found in MQW i-region at displacement damage dose as low as low as 1 $times10^{-8}$ MeV MeV/g. This is supported by experimental and simulated EBIC and electric field distribution results.

Journal Articles

First flight demonstration of glass-type space solar sheet

Shimazaki, Kazunori*; Kobayashi, Yuki*; Takahashi, Masato*; Imaizumi, Mitsuru*; Murashima, Mio*; Takahashi, Yu*; Toyota, Hiroyuki*; Kukita, Akio*; Oshima, Takeshi; Sato, Shinichiro; et al.

Proceedings of 40th IEEE Photovoltaic Specialists Conference (PVSC-40) (CD-ROM), p.2149 - 2154, 2014/06

https://doi.org/10.1109/PVSC.2014.6925350

The electrical performance of a glass-type space solar sheet (G-SSS) was demonstrated in space. G-SSS comprises InGaP/GaAs dual-junction and InGaP/GaAs/InGaAs triplejunction solar cells. It is lightweight solar generation sheet, less than 0.5 mm thick. It is mounted on the "HISAKI" (SPRINT-A) small scientific satellite, which was launched on September 14, 2013. The initial flight data were successfully acquired and this flight demonstration was a world-first experiment for G-SSS using III-V multi-junction thin-film solar cells. The cells demonstrated superior performance and the electrical outputs matched the flight prediction.

Journal Articles

A Report on TIARA Research Review Meeting

Arakawa, Kazuo

Hoshasen Kagaku, (80), p.57 - 59, 2005/09

http://ci.nii.ac.jp/naid/10019341773

no abstracts in English

Journal Articles

Analysis of end-of-life performance for proton-irradiated triple-junction space solar cell

Sumita, Taishi*; Imaizumi, Mitsuru*; Matsuda, Sumio*; Oshima, Takeshi; Oi, Akihiko; Kamiya, Tomihiro

Proceedings of 3rd World Conference on Photovoltaic Energy Conversion (WCPEC-3) (CD-ROM), 4 Pages, 2004/01

While high beginning-of-life efficiencies are important for space solar cells, the end-of-life performance is also critical factor. Two different prediction methods, "relative damage dose" and "displacement damage dose" methods, based on analysis of ground radiation test have been produced. We report proton radiation response for triple-junction space solar cells and analyze prediction methodology for the cell radiation response using the two methods. The results show that V $_{OC}$ degradation behavior can be predicted by taking into account a cell structure and proton penetration depth. Accurate prediction of power degradation, however, is required to determine the current-limiting sub cell after proton irradiations.

Journal Articles

Annealing enhancement effect by light illumination on proton irradiated Cu(In,Ga)Se $_{2}$ thin-film solar cells

Kawakita, Shiro*; Imaizumi, Mitsuru*; Yamaguchi, Masafumi*; Kushiya, Katsumi*; Oshima, Takeshi; Ito, Hisayoshi; Matsuda, Sumio*

Japanese Journal of Applied Physics, Part 2, 41(7A), p.L797 - L799, 2002/07

Recovery of electrical characteristics of Cu(In,Ga)Se $_{2}$ irradiated with protons was studied. A proton irradiation chamber which has a AM0 solar light was used for in-situ measurement in this study. The electrical characteristics of irradiated samples which were kept under a dark condition recovered. Furthermore,this recovery effect was enhanced by light illumination. The activation energy for the recovery was estimated to be 0.80 eV (light illumination case) and 0.92 eV (dark condition case).

Journal Articles